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| Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES * 'Trench' technology * Very low on-state resistance * Fast switching * Low thermal resistance g PSMN057-200P QUICK REFERENCE DATA d SYMBOL VDSS = 200 V ID = 39 A RDS(ON) 57 m s GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:* d.c. to d.c. converters * switched mode power supplies The PSMN060-200P is supplied in the SOT78 (TO220AB) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 C to 175C Tj = 25 C to 175C; RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 200 200 20 39 27.5 156 250 175 UNIT V V V A A A W C June 2000 1 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS IAS Non-repetitive avalanche energy Non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 35 A; tp = 100 s; Tj prior to avalanche = 25C; VDD 50 V; RGS = 50 ; VGS = 10 V; PSMN057-200P MIN. - MAX. 300 35 UNIT mJ A THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. in free air 60 MAX. 0.6 UNIT K/W K/W ELECTRICAL CHARACTERISTICS Tj= 25C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55C VDS = VGS; ID = 1 mA Tj = 175C Tj = -55C Drain-source on-state VGS = 10 V; ID = 17 A resistance Gate source leakage current VGS = 10 V; VDS = 0 V Zero gate voltage drain VDS = 200 V; VGS = 0 V; current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance Tj = 175C Tj = 175C MIN. 200 178 2.0 1.0 TYP. MAX. UNIT 3.0 41 2 0.03 96 13 37 18 58 105 78 3.5 4.5 7.5 3750 385 180 4.0 6 57 165 100 10 500 50 V V V V V m m nA A A nC nC nC ns ns ns ns nH nH nH pF pF pF ID = 39 A; VDD = 160 V; VGS = 10 V VDD = 100 V; RD = 2.7 ; VGS = 10 V; RG = 5.6 Resistive load Measured from tab to centre of die Measured from drain lead to centre of die Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz June 2000 2 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 20 A; -dIF/dt = 100 A/s; VGS = 0 V; VR = 30 V - PSMN057-200P TYP. MAX. UNIT 0.85 133 895 39 156 1.2 A A V ns nC June 2000 3 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN057-200P Normalised Power Derating, PD (%) 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 Mounting Base temperature, Tmb (C) 150 175 1 Transient thermal impedance, Zth j-mb (K/W) D = 0.5 0.2 0.1 0.1 0.05 0.02 P D single pulse T 0.01 tp D = tp/T 0.001 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 Pulse width, tp (s) Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb) Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Normalised Current Derating, ID (%) 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 Mounting Base temperature, Tmb (C) 150 175 50 45 40 35 30 25 20 15 10 5 0 0 Drain Current, ID (A) Tj = 25 C VGS = 10V 8V 6V 5.2 V 5V 4.8 V 4.6 V 4.4 V 4.2 V 0.2 0.4 0.6 0.8 1 1.2 1.4 Drain-Source Voltage, VDS (V) 1.6 1.8 2 Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); VGS 10 V Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS) 1000 Peak Pulsed Drain Current, IDM (A) Drain-Source On Resistance, RDS(on) (Ohms) RDS(on) = VDS/ ID 0.14 4.4 V 4.6 V Tj = 25 C tp = 10 us 100 us D.C. 1 ms 10 ms 100 ms 0.12 0.1 4.2 V 0.08 4.8 V 5V 5.2 V 6V VGS = 10V 0.02 0 1 10 100 Drain-Source Voltage, VDS (V) 1000 0 5 10 15 20 25 30 Drain Current, ID (A) 35 40 45 50 100 10 0.06 0.04 1 Fig.3. Safe operating area ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID) June 2000 4 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN057-200P Drain current, ID (A) 40 VDS > ID X RDS(ON) 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 Gate-source voltage, VGS (V) 175 C Tj = 25 C 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 Threshold Voltage, VGS(TO) (V) maximum typical minimum -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Junction Temperature, Tj (C) Fig.7. Typical transfer characteristics. ID = f(VGS) Transconductance, gfs (S) VDS > ID X RDS(ON) Tj = 25 C Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS 50 45 40 35 30 25 20 15 10 5 0 1.0E-01 Drain current, ID (A) 1.0E-02 175 C 1.0E-03 minimum typical 1.0E-04 maximum 1.0E-05 1.0E-06 0 5 10 15 20 25 Drain current, ID (A) 30 35 40 0 0.5 1 1.5 2 2.5 3 3.5 Gate-source voltage, VGS (V) 4 4.5 5 Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID) Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C Normalised On-state Resistance 2.9 2.7 2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Junction temperature, Tj (C) Capacitances, Ciss, Coss, Crss (pF) 10000 Ciss 1000 Coss Crss 100 0.1 1 10 Drain-Source Voltage, VDS (V) 100 Fig.9. Normalised drain-source on-state resistance. RDS(ON)/RDS(ON)25 C = f(Tj) Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz June 2000 5 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN057-200P Maximum Avalanche Current, IAS (A) Gate-source voltage, VGS (V) 16 ID = 39A 100 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Gate charge, QG (nC) VDD = 160 V Tj = 25 C VDD = 40 V 25 C 10 Tj prior to avalanche = 150 C 1 0.001 0.01 0.1 Avalanche time, tAV (ms) 1 10 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG) Fig.15. Maximum permissible non-repetitive avalanche current (IAS) versus avalanche time (tAV); unclamped inductive load Source-Drain Diode Current, IF (A) 40 35 30 175 C 25 20 15 10 5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Source-Drain Voltage, VSDS (V) Tj = 25 C VGS = 0 V Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj June 2000 6 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor MECHANICAL DATA Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 PSMN057-200P SOT78 E P A A1 q D1 D L2(1) L1 Q L b1 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 L2 max. 3.0 (1) P 3.8 3.6 q 3.0 2.7 Q 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 Fig.16. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g) Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to mounting instructions for SOT78 (TO220AB) package. 3. Epoxy meets UL94 V0 at 1/8". June 2000 7 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor DEFINITIONS Data sheet status Objective specification Product specification Limiting values PSMN057-200P This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 2000 8 Rev 1.000 |
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